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| PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 (NPN) 1 2 3 Type BCX 78 BCX 78-VII BCX 78-VIII BCX 78-IX BCX 78-X BCX 79 BCX 79-VII BCX 79-VIII BCX 79-IX BCX 79-X Marking - Ordering Code Q62702-C717 Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C629 Q62702-C718 Q62702-C630 Q62702-C631 Q62702-C632 Q62702-C633 Pin Configuration 1 2 3 C B E Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCX 78 BCX 79 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC Symbol BCX 78 VCE0 VCB0 VEB0 IC ICM IBM Tj Tstg 32 32 Values BCX 79 45 45 5 100 200 200 500 150 - 65 ... + 150 Unit V mA Total power dissipation, TC = 70 C Ptot mW C 250 160 K/W 1) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 2 BCX 78 BCX 79 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 78 BCX 79 Collector-base breakdown voltage IC = 10 A BCX 78 BCX 79 Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 C VCB = 45 V, TA = 150 C BCX 78 BCX 79 BCX 78 BCX 79 ICE0 - - IEB0 hFE BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X 20 30 40 100 120 180 250 380 40 45 60 60 140 200 270 340 170 250 350 500 - - - - - - - - 220 310 460 630 - - - - - - - - 20 20 20 nA - V(BR)CE0 32 45 V(BR)CB0 32 45 V(BR)EB0 ICB0 - - - - - - - - 20 20 10 10 nA nA A A A Values typ. max. Unit V - - - - - - - - - - 5 Collector cutoff current VCB = 32 V, VBE = 0.2 V,TA = 100 C VCB = 45 V, VBE = 0.2 V,TA = 100 C Emitter cutoff current VEB = 4 V DC current gain IC = 10 A, VCE = 5 V BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, IC = 2 mA, VCE = 5 V BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, IC = 100 mA, VCE = 1 V1) BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BCX 78 BCX 79 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA Base-emitter voltage IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 100 mA, VCE = 1 V 1) VCEsat VBEsat VBE(on) - 0.55 - 0.52 0.65 0.93 - 0.75 - - - - - 0.6 1.0 V Values typ. max. Unit 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 4 BCX 78 BCX 79 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, fT Cobo Cibo h11e BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X h12e - - - - h21e - - - - h22e BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X F - - - - - 18 24 30 50 2 - - - - - dB 200 260 330 520 - - - - S Values typ. max. Unit - - - 250 3 10 - - - MHz pF k - - - - 2.7 3.6 4.5 7.5 - - - - 10- 4 1.5 2 2 3 - - - - - Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 1 kHz, f = 200 Hz Semiconductor Group 5 BCX 78 BCX 79 Total power dissipation Ptot = f (TA; TC) Collector current IC = f (VBE) VCE = 5 V Permissible pulse load RthJA = f (tp) Collector cutoff current ICB0 = f (TA) for max. permissible reverse voltage Semiconductor Group 6 BCX 78 BCX 79 DC current gain hFE = f (IC) VCE = 5 V (common emitter configuration) Transition frequency fT = f (IC) VCE = 5 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 20 Base-emitter saturation voltage IC = f (VBEsat) hFE = 20 Semiconductor Group 7 |
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